N82HS321BN by NXP Semiconductors | Memory ICs

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	N82HS321BN
Description	OTP ROM; No. of Terminals: 24; Package Code: DIP; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 4.75 V; Terminal Position: DUAL;
Datasheet	N82HS321BN Datasheet
In Stock	1,854

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Memory Density:	32768 bit
Organization:	4KX8
Minimum Supply Voltage (Vsup):	4.75 V
Surface Mount:	NO
Memory IC Type:	OTP ROM
Memory Width:	8
No. of Functions:	1
No. of Terminals:	24
No. of Words:	4096 words
Qualification:	Not Qualified
Terminal Position:	DUAL
Package Style (Meter):	IN-LINE
Technology:	BIPOLAR
Maximum Access Time:	30 ns
No. of Words Code:	4K
JESD-30 Code:	R-PDIP-T24
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ASYNCHRONOUS
Nominal Supply Voltage / Vsup (V):	5
Parallel or Serial:	PARALLEL
Package Code:	DIP
Maximum Supply Voltage (Vsup):	5.25 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,854	-	-

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .6 A;

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SZNUP2105LT1G by Onsemi is a Transient Suppression Device with 2 elements in a common anode configuration. It has a max non-repetitive peak reverse power dissipation of 350W and breakdown voltage of 29.1V. Ideal for applications requiring bidirectional polarity protection, such as automotive electronics and industrial equipment due to its AEC-Q101 compliance and high clamping voltage of 44V.

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;