NCX2200GMBZ by NXP Semiconductors | Amplifiers

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	NCX2200GMBZ
Description	COMPARATOR; Terminal Form: NO LEAD; No. of Terminals: 6; Package Code: VSON; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;
Datasheet	NCX2200GMBZ Datasheet
In Stock	1,684

NAME	DESCRIPTION
Package Body Material:	Plastic/Epoxy
Output Type:	Push-Pull
Maximum Seated Height:	0.02 in (0.5 mm)
Maximum Supply Voltage Limit:	7 V
Maximum Supply Current:	9 μA
Surface Mount:	Yes
No. of Terminals:	6
Maximum Input Offset Voltage:	30 mV
Terminal Position:	Dual
Package Style (Meter):	Small Outline, Very Think Profile
JESD-30 Code:	R-PDSO-N6
Nominal Response Time:	800 ns
Package Shape:	Rectangular
Terminal Form:	No Lead
Maximum Operating Temperature:	85 °C (185 °F)
Package Code:	VSON
Amplifier Type:	Comparator
Width:	0.039 in (1 mm)
Packing Method:	Tape And Reel, 7 Inch
Minimum Operating Temperature:	-40 °C (-40 °F)
No. of Functions:	1
Package Equivalence Code:	SOLCC6,.04,20
Length:	0.057 in (1.45 mm)
Nominal Supply Voltage / Vsup (V):	1.6 V
Terminal Pitch:	0.02 in (0.5 mm)

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,684	-	-

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Time At Peak Reflow Temperature (s): 30; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

MAGNETIC FIELD SENSOR,HALL EFFECT; Mounting Feature: THROUGH HOLE MOUNT; No. of Terminals: 3; Output Type: ANALOG CURRENT; Package Shape or Style: RECTANGULAR; Output Range: 25mA;

SWITCHING REGULATOR; Temperature Grade: AUTOMOTIVE; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

FDN5618P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage. It features a single configuration with built-in diode, suitable for switching applications. With 10A IDM and 0.17 ohm RDS(on), it operates in the temperature range of -55 to 150 °C, making it ideal for various electronic devices.

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified;

LM358D-T by NXP Semiconductors is a dual operational amplifier with 70dB CMRR, 1000kHz unity gain bandwidth, and 9000uV max input offset voltage. Widely used in commercial applications due to its small outline package and low bias current of 0.5uA.

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; JESD-609 Code: e3; Minimum DS Breakdown Voltage: 60 V;