NXP Semiconductors - NE5212AN

  1. Home
  2. NXP Semiconductors - NE5212AN
NE5212AN by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number NE5212AN
Description WIDE BAND LOW POWER; Additional Features: LOW NOISE; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: 0 Cel; Maximum Operating Frequency: 140 MHz;
Datasheet NE5212AN Datasheet
In Stock3,195
NAME DESCRIPTION
Additional Features: LOW NOISE
Maximum Operating Temperature: 70 Cel
Maximum Operating Frequency: 140 MHz
RF or Microwave Device Type: WIDE BAND LOW POWER
Minimum Operating Temperature: 0 Cel
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
3,195 - -

Popular Products

Category Top Products

NJG1150UA2-TE1 by Nisshinbo Micro Devices

NJG1150UA2-TE1

Nisshinbo Micro Devices

NARROW BAND LOW POWER;
MMZ25332BT1 by Freescale Semiconductor

MMZ25332BT1

Freescale Semiconductor

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Supply Current: 412 mA;
LT5524EFE#PBF by Linear Technology

LT5524EFE#PBF

Linear Technology

WIDE BAND LOW POWER; Maximum Operating Temperature: 85 Cel; JESD-609 Code: e3; Construction: COMPONENT; Gain: 4.5 dB; Characteristic Impedance: 50 ohm;
HMC549MS8G by Analog Devices

HMC549MS8G

Analog Devices

HMC549MS8G by Analog Devices is a wide band low power RF amplifier with 2 dB gain, operating from 40 MHz to 960 MHz. It has a max input power of 0 dBm and operates on a 5V power supply. This surface mount component is ideal for RF and microwave applications requiring amplification in the frequency range specified.
HMC383LC4TR by Hittite Microwave

HMC383LC4TR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 5;
SPF-5122Z by Qorvo

SPF-5122Z

Qorvo

Qorvo's SPF-5122Z is a GAAS RF amplifier with 11.2dB gain, operating from 50MHz to 4GHz. It has a max input power of 27dBm and operates on a 5V supply, ideal for wideband medium-power applications in RF & microwave systems.
TQL9062 by Qorvo

TQL9062

Qorvo

The Qorvo TQL9062 is a wide band medium power RF amplifier with 15 dB gain, operating from 500 MHz to 6 GHz. It has a max input power of 33 dBm and VSWR of 1.29, suitable for various RF applications. Constructed with E-PHEMT technology, it features a plastic/epoxy package body and operates b/w -40°C to 105°C.
TGA2238-CP by Qorvo

TGA2238-CP

Qorvo

TGA2238-CP by Qorvo is a GAN technology RF amplifier with 28 dB gain, operating from 8-11 GHz. It has a max input power of 30 dBm and VSWR of 3, suitable for wideband high-power applications. This module operates b/w -40 to 85°C, drawing a max current of 650 mA at -2.6 to 28V supplies.
GALI-21+ by Mini-circuits

GALI-21+

Mini-circuits

GALI-21+ by Mini-circuits is a wideband low power RF amplifier with 11.5 dB gain, suitable for frequencies from 0 to 8000 MHz. It has a max input power of 15 dBm and VSWR of 2.5, making it ideal for RF and microwave applications requiring compact surface-mount components.
RDA1005LSR by Rf Micro Devices

RDA1005LSR

Rf Micro Devices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Minimum Operating Temperature: -40 Cel; Maximum Operating Frequency: 4000 MHz;
ZX60-2411BM-S by Mini-circuits

ZX60-2411BM-S

Mini-circuits

ZX60-2411BM-S by Mini-circuits is a COAXIAL RF amplifier with 9 dB Gain, 50 ohm Impedance, and 1.65 VSWR. Ideal for NARROW BAND LOW POWER applications in the frequency range of 1900-2400 MHz.
ADL9005ACPZN by Analog Devices

ADL9005ACPZN

Analog Devices

ADL9005ACPZN by Analog Devices is a wide band low power RF amplifier with 17 dB gain, operating from 10 MHz to 26500 MHz. It has a max input power of 22 dBm and VSWR of 1.49, suitable for RF & microwave applications requiring high performance amplification in plastic/epoxy package.
MAAM28000-A1G by TE Connectivity

MAAM28000-A1G

TE Connectivity

MAAM28000-A1G by TE Connectivity is a GAAS RF amplifier with 10V power supply, 8 terminals, and max operating temp of 100°C. Its ceramic package body material and surface mounting feature make it ideal for high-frequency applications in telecommunications and radar systems.
HMC506LP4TR by Analog Devices

HMC506LP4TR

Analog Devices

NARROW BAND LOW POWER;
ADL8142ACPZN-CSL by Analog Devices

ADL8142ACPZN-CSL

Analog Devices

WIDE BAND LOW POWER;
BGM1013,115 by NXP Semiconductors

BGM1013,115

NXP Semiconductors

NXP Semiconductors' BGM1013,115 is a wide band low power RF amplifier with 24 dB gain and 100-3000 MHz frequency range. It operates at -40 to 85°C, draws 33 mA at 5V, and has a max input power of -10 dBm. This component is ideal for applications requiring surface mount amplifiers in the RF & Microwave field.
XP1035-QH-0G00 by Mimix Broadband

XP1035-QH-0G00

Mimix Broadband

WIDE BAND HIGH POWER; Minimum Operating Temperature: -55 Cel; Construction: COMPONENT; Minimum Operating Frequency: 5900 MHz; JESD-609 Code: e3; Maximum Operating Temperature: 85 Cel;
HMC561LP3E by Analog Devices

HMC561LP3E

Analog Devices

Analog Devices' HMC561LP3E is a wide band low power RF amplifier with 16 terminals, operating from 8-21 GHz. It offers a max input power of 10 dBm, suitable for applications requiring RF amplification in the frequency range. The component is constructed using GaAs technology and can operate b/w -40 to 85°C, making it ideal for various RF and microwave applications.
HMC788ALP2E by Analog Devices

HMC788ALP2E

Analog Devices

HMC788ALP2E by Analog Devices is a wide band low power RF amplifier with 9 dB gain and max input power of 15 dBm. It operates in the frequency range of 0-10000 MHz, making it suitable for various RF and microwave applications. With a temperature range from -40 to 85°C, this component is ideal for demanding environments.
CMPA901A035F by Wolfspeed

CMPA901A035F

Wolfspeed

WIDE BAND HIGH POWER;