NTB0104BQ-Q100X by NXP Semiconductors | Logic ICs

Image shown is a representation only.

Manufacturer	NXP Semiconductors
Manufacturer's Part Number	NTB0104BQ-Q100X
Description	BUS TRANSCEIVER; Temperature Grade: AUTOMOTIVE; Terminal Form: NO LEAD; No. of Terminals: 14; Package Code: HVQCCN; Package Shape: RECTANGULAR;
Datasheet	NTB0104BQ-Q100X Datasheet
In Stock	4,690

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Output Characteristics:	3-STATE
Maximum Seated Height:	1 mm
Minimum Supply Voltage (Vsup):	1.2 V
Surface Mount:	YES
No. of Terminals:	14
Terminal Position:	QUAD
Package Style (Meter):	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
Screening Level:	AEC-Q100
JESD-30 Code:	R-PQCC-N14
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Maximum Operating Temperature:	125 Cel
Package Code:	HVQCCN
Width:	2.5 mm
Moisture Sensitivity Level (MSL):	1
No. of Bits:	4
Output Polarity:	TRUE
No. of Ports:	2
Packing Method:	TR, 7 INCH
Logic IC Type:	BUS TRANSCEIVER
Minimum Operating Temperature:	-40 Cel
No. of Functions:	1
Length:	3 mm
Propagation Delay (tpd):	17.2 ns
Nominal Supply Voltage / Vsup (V):	1.5
Family:	NTB0104
Peak Reflow Temperature (C):	260
Terminal Pitch:	.5 mm
Temperature Grade:	AUTOMOTIVE
Maximum Supply Voltage (Vsup):	3.6 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
4,690	-	-

1N4148WS-7-F by Diodes Inc. is a single rectifier diode with max reverse recovery time of 0.004 us and max reverse current of 1 uA. It operates b/w -65 to 150 °C, ideal for applications requiring small outline surface mount diodes with a max output current of 0.15 A.

SZNUP2105LT1G by Onsemi is a Transient Suppression Device with 2 elements in a common anode configuration. It has a max non-repetitive peak reverse power dissipation of 350W and breakdown voltage of 29.1V. Ideal for applications requiring bidirectional polarity protection, such as automotive electronics and industrial equipment due to its AEC-Q101 compliance and high clamping voltage of 44V.

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EPCS4SI8N by Intel is a small outline flash memory with 512Kx8 organization, operating at 3.3V. It features a max clock frequency of 40MHz and endurance of 100k write/erase cycles. Ideal for industrial applications requiring configuration memory with serial interface and low standby current consumption.

NXP Semiconductors' BSS123,215 is a N-CHANNEL FET for SWITCHING applications. Features include 100V DS Breakdown Voltage, 0.17A Drain Current, and 6 ohm On Resistance. With GULL WING terminals and ENHANCEMENT MODE operation, it's ideal for small outline packages in various electronic devices.

ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; No. of Outputs: 1; Package Equivalence Code: SIP3,.1TB;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; No. of Terminals: 3;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;