NX3L1T3157GM-G by NXP Semiconductors | Other Function Semiconductors

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	NX3L1T3157GM-G
Description	SPDT; Temperature Grade: AUTOMOTIVE; No. of Terminals: 6; Package Code: SON; Package Shape: RECTANGULAR; Surface Mount: YES;
Datasheet	NX3L1T3157GM-G Datasheet
In Stock	2,028

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Switch-on Time:	90 ns
Sub-Category:	Multiplexer or Switches
Surface Mount:	YES
Minimum Operating Temperature:	-40 Cel
No. of Functions:	1
No. of Terminals:	6
Maximum On-state Resistance (Ron):	4.1 ohm
Qualification:	Not Qualified
Package Equivalence Code:	SOLCC6,.04,20
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Other IC type:	SPDT
Technology:	CMOS
JESD-30 Code:	R-PDSO-N6
Output (V):	SEPARATE OUTPUT
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Maximum Operating Temperature:	125 Cel
Package Code:	SON
Switching (V):	BREAK-BEFORE-MAKE
Terminal Pitch:	.5 mm
Temperature Grade:	AUTOMOTIVE
Power Supplies (V):	1.5/3.3

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,028	-	-

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Surface Mount: YES; Config: SINGLE; No. of Phases: 1; No. of Elements: 1; Maximum Repetitive Peak Reverse Voltage: 100 V;

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

ULN2803ADWR by Texas Instruments is a peripheral driver with 8 functions, open-collector output characteristics, and built-in transient protections. It operates b/w -40 to 85°C, has a max supply voltage of 3V, and is ideal for buffer or inverter-based applications requiring sink current flow direction.

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 30; No. of Elements: 1;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum Operating Temperature: -65 Cel; Terminal Position: BOTTOM;

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Terminal Form: GULL WING; Terminal Position: DUAL;

FDC5614P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 20A Max IDM and 0.105 ohm RDS(ON), operating in ENHANCEMENT MODE at -55 to 150 °C. This SMALL OUTLINE transistor has a built-in diode, GULL WING terminals, and METAL-OXIDE SEMICONDUCTOR technology.

MURS160T3G by Onsemi is a single rectifier diode with a max output current of 2A and max repetitive peak reverse voltage of 600V. It has a fast recovery time of 0.075us, making it suitable for high voltage applications. The diode operates in temperatures ranging from -65 to 175°C, ideal for power systems requiring ultra-fast response.