NZX20A,113 by NXP Semiconductors | Diodes

Image shown is a representation only.

Manufacturer	NXP Semiconductors
Manufacturer's Part Number	NZX20A,113
Description	ZENER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Datasheet	NZX20A,113 Datasheet
In Stock	4,767

NAME	DESCRIPTION
Package Body Material:	CERAMIC, GLASS-SEALED
Working Test Current:	2 mA
Config:	SINGLE
Diode Type:	ZENER DIODE
Surface Mount:	NO
Maximum Voltage Tolerance:	2.34 %
Diode Element Material:	SILICON
No. of Terminals:	2
Qualification:	Not Qualified
Terminal Position:	AXIAL
Package Style (Meter):	LONG FORM
Technology:	ZENER
JESD-30 Code:	O-GALF-W2
Nominal Reference Voltage:	19.25 V
No. of Elements:	1
Package Shape:	ROUND
Maximum Power Dissipation:	.5 W
Terminal Form:	WIRE
Polarity:	UNIDIRECTIONAL
Maximum Operating Temperature:	175 Cel
Case Connection:	ISOLATED

Pricing (USD)

Qty.	Unit Price	Ext. Price
4,767	-	-

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Package Style (Meter): SMALL OUTLINE; Maximum Drain Current (Abs) (ID): 2.5 A;

The Onsemi NC7WZ07P6X is a logic gate with 2 functions, featuring a propagation delay of 4.8 ns at 1.8V supply voltage. With open-drain output characteristics, it operates in industrial temperatures from -40 to 85°C. Ideal for applications requiring fast signal processing and low power consumption in compact designs.

NXP Semiconductors' BSS138PS,115 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.32A max drain current. Ideal for switching applications, it features a 1.6 ohm max on-resistance and operates in enhancement mode. The transistor comes in a small outline package with GULL WING terminals, making it suitable for surface mount designs.

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Terminal Position: DUAL;