P87C750EBDDB-T by NXP Semiconductors | Peripheral ICs

Image shown is a representation only.

Manufacturer	NXP Semiconductors
Manufacturer's Part Number	P87C750EBDDB-T
Description	MICROCONTROLLER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 24; Package Code: SSOP; Package Shape: RECTANGULAR;
Datasheet	P87C750EBDDB-T Datasheet
In Stock	4,091

NAME	DESCRIPTION
Minimum Supply Voltage:	4.5 V
Package Body Material:	PLASTIC/EPOXY
Nominal Supply Voltage:	5 V
Integrated Cache:	NO
Maximum Seated Height:	2 mm
Surface Mount:	YES
Maximum Supply Current:	22 mA
ADC Channels:	NO
On Chip Data RAM Width:	8
No. of Terminals:	24
No. of Timers:	1
No. of Serial I/Os:	0
DMA Channels:	NO
Terminal Position:	DUAL
Format:	FIXED POINT
Package Style (Meter):	SMALL OUTLINE, SHRINK PITCH
No. of DMA Channels:	0
No. of I/O Lines:	19
Address Bus Width:	11
Technology:	CMOS
RAM Words:	64
JESD-30 Code:	R-PDSO-G24
Maximum Clock Frequency:	16 MHz
Package Shape:	RECTANGULAR
ROM Words:	1024
Terminal Form:	GULL WING
Maximum Operating Temperature:	70 Cel
Package Code:	SSOP
Width:	5.3 mm
Speed:	16 rpm
Peripheral IC Type:	MICROCONTROLLER
Maximum Supply Voltage:	5.5 V
No. of External Interrupts:	2
Low Power Mode:	YES
Boundary Scan:	NO
External Data Bus Width:	8
Bit Size:	8
DAC Channels:	NO
Minimum Operating Temperature:	0 Cel
Qualification:	Not Qualified
Length:	8.2 mm
PWM Channels:	NO
On Chip Program ROM Width:	8
ROM Programmability:	OTPROM
Terminal Pitch:	.65 mm
Temperature Grade:	COMMERCIAL

Pricing (USD)

Qty.	Unit Price	Ext. Price
4,091	-	-

USBLC6-2SC6 by STMicroelectronics is a unidirectional transient voltage suppressor diode with a breakdown voltage of 6V. It has a max clamping voltage of 17V and operates in temperatures ranging from -40 to 125°C. This device, with dual terminals and matte tin finish, is ideal for protecting sensitive electronics from voltage spikes in various applications.

KEMET C1210C104K5RACTU is a ceramic capacitor with 0.1uF capacitance, rated for 50V. It has X7R temperature characteristics and ±10% tolerance, suitable for surface mount applications in a wide temperature range from -55°C to 125°C. Its compact rectangular package makes it ideal for various electronic devices.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; No. of Elements: 1; Transistor Application: SWITCHING;

1N4148WT by Onsemi is a single rectifier diode with a max output current of 0.3A and forward voltage of 0.72V. It has a small outline package style, matte tin terminal finish, and operates at temperatures up to 150°C. Ideal for applications requiring fast reverse recovery time such as power supplies and signal demodulation circuits.

RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Reverse Recovery Time: .004 us; Maximum Repetitive Peak Reverse Voltage: 100 V;

TE Connectivity's 0460-202-16141 contact features a crimp terminal type, machined contact design, and rated AC voltage of 1500V. With a wire gauge range of 20-16 AWG, it is ideal for applications requiring a male round pin-socket contact style in assembly products.

ULN2003ADR by Texas Instruments is a NPN BJT with 7 elements, max IC of 0.5A, and VCEsat of 1.6V. Ideal for switching applications in small outline packages with Gull Wing terminals.

IRLML6401TRPBF by Infineon is a P-CHANNEL FET for SWITCHING applications. It features a 12V DS Breakdown Voltage, 34A IDM, and 0.05ohm RDS(on). With a small outline package style, it operates in an ambient temperature range of -55 to 150 °C.

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;