NXP Semiconductors - PBRN123YS

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PBRN123YS by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PBRN123YS
Description NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): .7 W; Maximum Collector Current (IC): .6 A; Maximum Collector-Emitter Voltage: 40 V;
Datasheet PBRN123YS Datasheet
In Stock491
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .6 A
Configuration: SINGLE WITH BUILT-IN RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
JEDEC-95 Code: TO-92
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: NPN
Surface Mount: NO
Minimum DC Current Gain (hFE): 300
No. of Terminals: 3
Qualification: Not Qualified
Maximum Power Dissipation (Abs): .7 W
Maximum Collector-Emitter Voltage: 40 V
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: R-PBCY-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Additional Features: BUILT-IN BIAS RESISTOR RATIO IS 4.55
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