NXP Semiconductors - PBRP123YT

PBRP123YT by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number PBRP123YT
Description PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .57 W; Maximum Collector Current (IC): .6 A; JESD-30 Code: R-PDSO-G3;
Datasheet PBRP123YT Datasheet
In Stock904
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .6 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Sub-Category: BIP General Purpose Small Signal
Surface Mount: YES
Terminal Finish: Tin (Sn)
No. of Terminals: 3
Maximum Power Dissipation (Abs): .57 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Moisture Sensitivity Level (MSL): 1
JEDEC-95 Code: TO-236AB
Polarity or Channel Type: PNP
Minimum DC Current Gain (hFE): 190
JESD-609 Code: e3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 40 V
Additional Features: BUILT-IN BIAS RESISTOR RATIO IS 4.55
Peak Reflow Temperature (C): 260
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
904 - -

Popular Products

Category Top Products