NXP Semiconductors - PBSS4160PANPS

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PBSS4160PANPS by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PBSS4160PANPS
Description NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 175 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;
Datasheet PBSS4160PANPS Datasheet
In Stock3,424
NAME DESCRIPTION
Nominal Transition Frequency (fT): 175 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 1 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 6
Maximum Power Dissipation (Abs): 2 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N6
No. of Elements: 2
Package Shape: SQUARE
Terminal Form: NO LEAD
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
Maximum Power Dissipation Ambient: 2 W
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: NPN AND PNP
Minimum DC Current Gain (hFE): 70
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Maximum Collector-Emitter Voltage: 60 V
Maximum Collector-Base Capacitance: 13 pF
Reference Standard: AEC-Q101; IEC-60134
Peak Reflow Temperature (C): 260
Maximum VCEsat: .55 V
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