NXP Semiconductors - PBSS4350SPN,115

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PBSS4350SPN,115 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PBSS4350SPN,115
Description NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): .55 W; Maximum Collector Current (IC): 2.7 A; Maximum Collector-Emitter Voltage: 50 V;
Datasheet PBSS4350SPN,115 Datasheet
In Stock4,680
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 2.7 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 104 ns
Sub-Category: BIP General Purpose Small Signal
Surface Mount: YES
Terminal Finish: NICKEL PALLADIUM GOLD
No. of Terminals: 8
Maximum Power Dissipation (Abs): .55 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 520 ns
JESD-30 Code: R-PDSO-G8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: NPN AND PNP
Minimum DC Current Gain (hFE): 120
JESD-609 Code: e4
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 50 V
Peak Reflow Temperature (C): 260
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Pricing (USD)

Qty. Unit Price Ext. Price
4,680 $0.161 $753.480

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