NXP Semiconductors - PBSS4350SS,118

  1. Home
  2. NXP Semiconductors - PBSS4350SS,118
PBSS4350SS,118 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number PBSS4350SS,118
Description NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 2.7 A; No. of Elements: 1;
Datasheet PBSS4350SS,118 Datasheet
In Stock4,406
NAME DESCRIPTION
Maximum Collector Current (IC): 2.7 A
Maximum Power Dissipation (Abs): 2 W
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Sub-Category: Other Transistors
Peak Reflow Temperature (C): 260
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 120
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
4,406 - -

Popular Products

Category Top Products

TIP127 by Silicon Group

TIP127

Silicon Group

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;
2N3906 by Panjit International

2N3906

Panjit International

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
BUX87 by Tt Electronics Plc

BUX87

Tt Electronics Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): .5 A; JESD-609 Code: e0;
2N2219A by Philips Semiconductors

2N2219A

Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
MMBT3904 by Unisonic Technologies

MMBT3904

Unisonic Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
2N3019 by Transistor & Electronic

2N3019

Transistor & Electronic

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): 1 A;
2N4401 by Yangzhou Yangjie Electronics

2N4401

Yangzhou Yangjie Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .6 A;
2N3906 by Sprague Electric

2N3906

Sprague Electric

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
MMBT2907A by Vishay Intertechnology

MMBT2907A

Vishay Intertechnology

Vishay Intertechnology's MMBT2907A is a PNP transistor with a max power dissipation of 0.3W, hFE of 50, and fT of 200MHz. Ideal for applications requiring a single configuration, surface mount capability, and operating temperatures up to 150°C.
BC337-40 by Weitron Technology

BC337-40

Weitron Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .8 A; Maximum Operating Temperature: 150 Cel;
MMBT2222A by Sinyork

MMBT2222A

Sinyork

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .6 A;
BD139 by Philips Semiconductors

BD139

Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
BC557B by Philips Semiconductors

BC557B

Philips Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A; JESD-609 Code: e3;
TIP125 by Thomson Consumer Electronics

TIP125

Thomson Consumer Electronics

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;
2N3055H by Inchange Semiconductor

2N3055H

Inchange Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): .8 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
BD679A by Inchange Semiconductor

BD679A

Inchange Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 4 A;
2N2905A by Comset Semiconductors

2N2905A

Comset Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
BD139 by Iskra Semic Capacitors Industry

BD139

Iskra Semic Capacitors Industry

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
BC548C by Synsemi

BC548C

Synsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
TIP115 by Diotec Semiconductor Ag

TIP115

Diotec Semiconductor Ag

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; JESD-609 Code: e0;