NXP Semiconductors - PBSS5630PA

  1. Home
  2. NXP Semiconductors - PBSS5630PA
PBSS5630PA by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number PBSS5630PA
Description PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Collector Current (IC): 6 A; Maximum Collector-Emitter Voltage: 30 V;
Datasheet PBSS5630PA Datasheet
In Stock262
NAME DESCRIPTION
Nominal Transition Frequency (fT): 80 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 6 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 110
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 30 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N3
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
262 - -

Popular Products

Category Top Products

2N2222A by ROHM

2N2222A

ROHM

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .6 A;
BC547-C by Secos

BC547-C

Secos

Secos BC547-C is a NPN BJT with hFE of 110, VCE of 45V, and fT of 150MHz. Ideal for low-power applications in electronics due to its 0.1A IC rating and silicon transistor element material. Its through-hole package makes it suitable for various circuit configurations.
BC847B by Promax-johnton

BC847B

Promax-johnton

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Qualification: Not Qualified; Transistor Application: AMPLIFIER;
2N2219A by Microchip Technology

2N2219A

Microchip Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum Operating Temperature: -55 Cel; Transistor Element Material: SILICON;
JANTX2N2222AUA by M/a-com Technology Solutions

JANTX2N2222AUA

M/a-com Technology Solutions

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; No. of Terminals: 4; Terminal Form: NO LEAD;
ULN2003AD by Texas Instruments

ULN2003AD

Texas Instruments

ULN2003AD by Texas Instruments is a NPN BJT with 7 elements, max IC of 0.5A, and VCEsat of 1.6V. Ideal for switching applications, it has a max VCE of 50V and comes in a small outline package style suitable for surface mount technology.
MBT3904DW1T1G by Onsemi

MBT3904DW1T1G

Onsemi

MBT3904DW1T1G by Onsemi is a small signal NPN bipolar junction transistor (BJT) with a max collector-emitter voltage of 40V. It has a min DC current gain of 30 and can handle a max collector current of 0.2A. This transistor is commonly used in amplifier applications due to its high transition frequency of 300MHz.
BC817-40 by Diotec Semiconductor Ag

BC817-40

Diotec Semiconductor Ag

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .8 A;
2N2905A by Semitronics

2N2905A

Semitronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
JANTX2N2222AUB by Microsemi

JANTX2N2222AUB

Microsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; Reference Standard: MIL-19500/255; Maximum Collector-Emitter Voltage: 50 V;
BC857B,215 by NXP Semiconductors

BC857B,215

NXP Semiconductors

BC857B,215 by NXP Semiconductors is a PNP BJT transistor for switching applications. It has a max VCEsat of 0.65V and min hFE of 220. With a max collector-emitter voltage of 45V, it operates at temperatures up to 150°C.
BC856B,215 by Nexperia

BC856B,215

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Maximum Operating Temperature: 150 Cel;
BC847C by STMicroelectronics

BC847C

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;
2N3904 by Jiangsu Changjiang Electronics Technology

2N3904

Jiangsu Changjiang Electronics Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .2 A;
2N2222AUA by Optek Technology

2N2222AUA

Optek Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
2N3904 by Samsung

2N3904

Samsung

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
MMBT3906 by Jiangsu Changjiang Electronics Technology

MMBT3906

Jiangsu Changjiang Electronics Technology

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Minimum DC Current Gain (hFE): 30;
2N2907A by Nte Electronics

2N2907A

Nte Electronics

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .6 A; Package Body Material: METAL; Minimum DC Current Gain (hFE): 50;
MMBT3904 by Rochester Electronics

MMBT3904

Rochester Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Terminal Position: DUAL;
MMBT3906 by Yangzhou Yangjie Electronics

MMBT3906

Yangzhou Yangjie Electronics

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; No. of Terminals: 3;