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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | PDTA114EMB |
| Description | PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 180 MHz; Maximum Collector Current (IC): .1 A; Moisture Sensitivity Level (MSL): 1; |
| Datasheet | PDTA114EMB Datasheet |
| In Stock | 4,150 |
| NAME | DESCRIPTION |
|---|---|
| Nominal Transition Frequency (fT): | 180 MHz |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | .1 A |
| Configuration: | SINGLE WITH BUILT-IN RESISTOR |
| Transistor Element Material: | SILICON |
| Transistor Application: | SWITCHING |
| Polarity or Channel Type: | PNP |
| Surface Mount: | YES |
| Minimum DC Current Gain (hFE): | 30 |
| Terminal Finish: | TIN |
| JESD-609 Code: | e3 |
| No. of Terminals: | 3 |
| Maximum Collector-Emitter Voltage: | 50 V |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | CHIP CARRIER |
| JESD-30 Code: | R-PBCC-N3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | NO LEAD |
| Additional Features: | BUILT IN BIAS RESISTANCE RATIO IS 1 |
| Reference Standard: | AEC-Q101; IEC-60134 |
| Case Connection: | COLLECTOR |
| Moisture Sensitivity Level (MSL): | 1 |
