PDTA114YM,315 by NXP Semiconductors | Transistors

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	PDTA114YM,315
Description	PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Maximum Time At Peak Reflow Temperature (s): 30;
Datasheet	PDTA114YM,315 Datasheet
In Stock	4,238

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.1 A
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Sub-Category:	BIP General Purpose Small Signal
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.25 W
Terminal Position:	BOTTOM
Package Style (Meter):	CHIP CARRIER
JESD-30 Code:	R-PBCC-N3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Maximum Operating Temperature:	150 Cel
Case Connection:	COLLECTOR
Moisture Sensitivity Level (MSL):	1
Polarity or Channel Type:	PNP
Minimum DC Current Gain (hFE):	100
JESD-609 Code:	e3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	50 V
Additional Features:	BUILT-IN BIAS RESISTOR RATIO IS 4.7
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
4,238	$0.024	$101.712

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