NXP Semiconductors - PDTA115ES

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PDTA115ES by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PDTA115ES
Description PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .02 A; No. of Elements: 1;
Datasheet PDTA115ES Datasheet
In Stock1,145
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .02 A
Configuration: SINGLE WITH BUILT-IN RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
JEDEC-95 Code: TO-92
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: PNP
Surface Mount: NO
Minimum DC Current Gain (hFE): 80
Terminal Finish: Matte Tin (Sn)
JESD-609 Code: e3
No. of Terminals: 3
Qualification: Not Qualified
Maximum Power Dissipation (Abs): .5 W
Maximum Collector-Emitter Voltage: 50 V
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-PBCY-T3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: THROUGH-HOLE
Additional Features: BUILT-IN BIAS RESISTOR RATIO IS 1
Moisture Sensitivity Level (MSL): 1
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Pricing (USD)

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