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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | PDTA123JM |
| Description | PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Terminal Position: BOTTOM; |
| Datasheet | PDTA123JM Datasheet |
| In Stock | 1,092 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | .1 A |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE WITH BUILT-IN RESISTOR |
| Transistor Element Material: | SILICON |
| Transistor Application: | SWITCHING |
| Sub-Category: | BIP General Purpose Small Signal |
| Surface Mount: | YES |
| Terminal Finish: | Tin (Sn) |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | .25 W |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | CHIP CARRIER |
| JESD-30 Code: | R-PBCC-N3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | NO LEAD |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | COLLECTOR |
| Moisture Sensitivity Level (MSL): | 1 |
| Polarity or Channel Type: | PNP |
| Minimum DC Current Gain (hFE): | 100 |
| JESD-609 Code: | e3 |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 50 V |
| Additional Features: | BUILT-IN BIAS RESISTOR RATIO IS 21 |
| Peak Reflow Temperature (C): | 260 |
