NXP Semiconductors - PDTA123JU/DG,115

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PDTA123JU/DG,115 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PDTA123JU/DG,115
Description PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 100; No. of Elements: 1;
Datasheet PDTA123JU/DG,115 Datasheet
In Stock4,654
NAME DESCRIPTION
Maximum Collector Current (IC): .1 A
Maximum Power Dissipation (Abs): .2 W
Transistor Element Material: SILICON
No. of Elements: 1
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 100
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