NXP Semiconductors - PDTA143EEF

  1. Home
  2. NXP Semiconductors - PDTA143EEF
PDTA143EEF by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number PDTA143EEF
Description PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;
Datasheet PDTA143EEF Datasheet
In Stock535
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Configuration: SINGLE WITH BUILT-IN RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 30
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 3
Qualification: Not Qualified
Maximum Power Dissipation (Abs): .25 W
Maximum Collector-Emitter Voltage: 50 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Additional Features: BUILT-IN BIAS RESISTOR RATIO 1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
535 - -

Popular Products

Category Top Products

2N2222AUA by Optek Technology

2N2222AUA

Optek Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
JANTX2N2222AUB by Defense Logistics Agency

JANTX2N2222AUB

Defense Logistics Agency

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; No. of Terminals: 3; Qualification: Qualified;
PMBT2222A,215 by NXP Semiconductors

PMBT2222A,215

NXP Semiconductors

The NXP Semiconductors PMBT2222A,215 is a NPN BJT transistor for switching applications. It has a max VCEsat of 1V, min hFE of 40, and max IC of 0.6A. With a package style of small outline and peak reflow temp of 260C, it operates b/w -65 to 150 °C for various electronic circuits.
BC817-25 by Itt Semiconductor

BC817-25

Itt Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Terminal Form: GULL WING; Maximum Collector-Emitter Voltage: 45 V;
SMMBT5401LT1G by Onsemi

SMMBT5401LT1G

Onsemi

SMMBT5401LT1G by Onsemi is a PNP BJT with 3 terminals, max. power dissipation of 0.3W, and max. collector-emitter voltage of 150V. Ideal for small outline packages, it operates at up to 150°C and has a nominal transition frequency of 100MHz, making it suitable for high-speed applications in automotive electronics.
BC817-40 by General Semiconductor

BC817-40

General Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .8 A;
BC846B by Promax-johnton

BC846B

Promax-johnton

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Terminal Form: GULL WING;
BC846B by Nexperia

BC846B

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-G3;
2N2905A by Crimson Semiconductor

2N2905A

Crimson Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
2N3906 by Swampscott Electronics

2N3906

Swampscott Electronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
2N3904 by Rochester Electronics

2N3904

Rochester Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Transistor Element Material: SILICON;
2N2219A by Hi-tron Semiconductor

2N2219A

Hi-tron Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
MMBT3906 by Rectron

MMBT3906

Rectron

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; JESD-30 Code: R-PDSO-G3; Maximum Turn On Time (ton): 70 ns;
2N3906 by Semitronics

2N3906

Semitronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
JANTX2N2222AUB by M/a-com Technology Solutions

JANTX2N2222AUB

M/a-com Technology Solutions

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; Transistor Application: SWITCHING; Reference Standard: MIL-19500;
JANTX2N2222AUB by New England Semiconductor

JANTX2N2222AUB

New England Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
MMBT3906 by Nexperia

MMBT3906

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Transistor Application: SWITCHING;
BC817-40,235 by Nexperia

BC817-40,235

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; No. of Terminals: 3;
BC547CG by Onsemi

BC547CG

Onsemi

BC547CG by Onsemi is a NPN BJT with 3 terminals. It has a max power dissipation of 0.625W, hFE of 420, and fT of 300MHz. Ideal for amplifier applications due to its max collector-emitter voltage of 45V and max collector current of 0.1A.
2N2905A by Space Power Electronics

2N2905A

Space Power Electronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;