PDTB113EK by NXP Semiconductors | Transistors

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	PDTB113EK
Description	PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .5 A; JESD-30 Code: R-PDSO-G3;
Datasheet	PDTB113EK Datasheet
In Stock	3,652

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.5 A
Configuration:	SINGLE WITH BUILT-IN RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
JEDEC-95 Code:	TO-236
Sub-Category:	BIP General Purpose Small Signal
Polarity or Channel Type:	PNP
Surface Mount:	YES
Minimum DC Current Gain (hFE):	33
Terminal Finish:	TIN
JESD-609 Code:	e3
No. of Terminals:	3
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	.25 W
Maximum Collector-Emitter Voltage:	50 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Additional Features:	BUILT-IN BIAS RESISTORS RATIO 1

Pricing (USD)

Qty.	Unit Price	Ext. Price
3,652	-	-

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