NXP Semiconductors - PDTB113ET,235

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PDTB113ET,235 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PDTB113ET,235
Description PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Terminal Form: GULL WING; Transistor Application: SWITCHING;
Datasheet PDTB113ET,235 Datasheet
In Stock1,575
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .5 A
Configuration: SINGLE WITH BUILT-IN RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
JEDEC-95 Code: TO-236AB
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 33
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 50 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Additional Features: BUILT-IN BIAS RESISTOR RATIO IS 1
Maximum Operating Temperature: 150 Cel
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