NXP Semiconductors - PDTB113ET/A2,215

  1. Home
  2. NXP Semiconductors - PDTB113ET/A2,215
PDTB113ET/A2,215 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number PDTB113ET/A2,215
Description PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .5 A; No. of Elements: 1; Transistor Element Material: SILICON;
Datasheet PDTB113ET/A2,215 Datasheet
In Stock1,421
NAME DESCRIPTION
Maximum Collector Current (IC): .5 A
Maximum Power Dissipation (Abs): .25 W
Transistor Element Material: SILICON
No. of Elements: 1
Sub-Category: BIP General Purpose Small Signals
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 33
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,421 - -

Popular Products

Category Top Products

MMBT2222ALT1G by Rochester Electronics

MMBT2222ALT1G

Rochester Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;
2N3904TAR by Fairchild Semiconductor

2N3904TAR

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
BC856BLT1G by Onsemi

BC856BLT1G

Onsemi

BC856BLT1G by Onsemi is a PNP BJT with 3 terminals, operating at temperatures from -55 to 150°C. It has a max collector-emitter voltage of 65V and max collector current of 0.1A. With a transition frequency of 100MHz, it's ideal for small signal applications in electronics requiring high DC current gain.
2N2222A by Microsemi

2N2222A

Microsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 30; No. of Elements: 1;
BC547B by National Semiconductor

BC547B

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
BC846B by Diodes Incorporated

BC846B

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
2N3904TA by Rochester Electronics

2N3904TA

Rochester Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Minimum DC Current Gain (hFE): 30;
2N2905A by Micro Electronics

2N2905A

Micro Electronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
MMBT3906 by Lite-on Semiconductor

MMBT3906

Lite-on Semiconductor

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Package Style (Meter): SMALL OUTLINE;
MMBT2222A by Diotec Semiconductor Ag

MMBT2222A

Diotec Semiconductor Ag

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .6 A;
BC547B by Lite-on Semiconductor

BC547B

Lite-on Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Terminal Position: BOTTOM;
BC547B by Continental Device India

BC547B

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
BC81725 by Zetex Plc

BC81725

Zetex Plc

BC81725 by Zetex Plc is a NPN BJT transistor with hFE of 160, VCE of 45V, and IC of 0.5A. Ideal for small signal applications in electronics due to its high transition frequency of 200MHz and compact small outline package. Suitable for surface mount designs requiring low power dissipation and high reliability.
PBHV8540X,115 by Nexperia

PBHV8540X,115

Nexperia

PBHV8540X,115 by Nexperia is a NPN BJT transistor with hFE of 100. It has VCE of 400V and IC of 0.5A, suitable for switching applications. This small outline transistor operates at fT of 30MHz, making it ideal for high-speed electronic circuits.
BC817-25W,115 by Nexperia

BC817-25W,115

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Package Shape: RECTANGULAR;
2N2222AUA by Microchip Technology

2N2222AUA

Microchip Technology

2N2222AUA by Microchip is a NPN transistor with max. collector-emitter voltage of 50V and max. collector current of 0.8A. It has a min. DC current gain of 30, ideal for switching applications with a max. power dissipation of 0.65W in surface mount package style suitable for small outline designs.
BC547C by Taitron Components

BC547C

Taitron Components

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): .1 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
2N2219A by Nte Electronics

2N2219A

Nte Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
2N2222AUB by Vpt Components

2N2222AUB

Vpt Components

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .8 A; Maximum Collector-Emitter Voltage: 50 V;
BC847BV,115 by Nexperia

BC847BV,115

Nexperia

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; No. of Elements: 2;