NXP Semiconductors - PDTB113ET/A2,215

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PDTB113ET/A2,215 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PDTB113ET/A2,215
Description PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .5 A; No. of Elements: 1; Transistor Element Material: SILICON;
Datasheet PDTB113ET/A2,215 Datasheet
In Stock1,421
NAME DESCRIPTION
Maximum Collector Current (IC): .5 A
Maximum Power Dissipation (Abs): .25 W
Transistor Element Material: SILICON
No. of Elements: 1
Sub-Category: BIP General Purpose Small Signals
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 33
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