NXP Semiconductors - PDTB114EU,135

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PDTB114EU,135 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PDTB114EU,135
Description PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Collector Current (IC): .5 A; Additional Features: BUILT IN BIAS RESISTANCE RATIO IS 1;
Datasheet PDTB114EU,135 Datasheet
In Stock4,814
NAME DESCRIPTION
Nominal Transition Frequency (fT): 140 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .5 A
Configuration: SINGLE WITH BUILT-IN RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 70
No. of Terminals: 3
Maximum Collector-Emitter Voltage: 50 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Additional Features: BUILT IN BIAS RESISTANCE RATIO IS 1
Reference Standard: AEC-Q101; IEC-60134
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