NXP Semiconductors - PDTB123EK,115

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PDTB123EK,115 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PDTB123EK,115
Description PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .5 A; Minimum DC Current Gain (hFE): 40; No. of Elements: 1;
Datasheet PDTB123EK,115 Datasheet
In Stock1,930
NAME DESCRIPTION
Other Names: PDTB123EK T/R
934058966115
PDTB123EK T/R-ND
Maximum Collector Current (IC): .5 A
Maximum Power Dissipation (Abs): .25 W
Transistor Element Material: SILICON
No. of Elements: 1
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 40
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