NXP Semiconductors - PDTB123ES,126

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PDTB123ES,126 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PDTB123ES,126
Description PNP; Surface Mount: NO; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .5 A; Minimum DC Current Gain (hFE): 40; No. of Elements: 1;
Datasheet PDTB123ES,126 Datasheet
In Stock3,693
NAME DESCRIPTION
Other Names: 934059142126
PDTB123ES AMO-ND
PDTB123ES AMO
Maximum Collector Current (IC): .5 A
Maximum Power Dissipation (Abs): .5 W
Transistor Element Material: SILICON
No. of Elements: 1
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: PNP
Surface Mount: NO
Minimum DC Current Gain (hFE): 40
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