NXP Semiconductors - PDTB123TK,115

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PDTB123TK,115 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PDTB123TK,115
Description PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .5 A; Transistor Element Material: SILICON; No. of Elements: 1;
Datasheet PDTB123TK,115 Datasheet
In Stock1,757
NAME DESCRIPTION
Other Names: 934059205115
PDTB123TK T/R-ND
PDTB123TK T/R
Maximum Collector Current (IC): .5 A
Maximum Power Dissipation (Abs): .25 W
Transistor Element Material: SILICON
No. of Elements: 1
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 100
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