NXP Semiconductors - PDTB123TS,126

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PDTB123TS,126 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PDTB123TS,126
Description PNP; Surface Mount: NO; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .5 A; No. of Elements: 1; Transistor Element Material: SILICON;
Datasheet PDTB123TS,126 Datasheet
In Stock1,693
NAME DESCRIPTION
Maximum Collector Current (IC): .5 A
Maximum Power Dissipation (Abs): .5 W
Transistor Element Material: SILICON
No. of Elements: 1
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: PNP
Surface Mount: NO
Minimum DC Current Gain (hFE): 100
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