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Manufacturer | NXP Semiconductors |
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Manufacturer's Part Number | PDTC113ET |
Description | NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1; |
Datasheet | PDTC113ET Datasheet |
In Stock | 2,791 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Collector Current (IC): | .1 A |
Configuration: | SINGLE WITH BUILT-IN RESISTOR |
Transistor Element Material: | SILICON |
Transistor Application: | SWITCHING |
JEDEC-95 Code: | TO-236AB |
Sub-Category: | BIP General Purpose Small Signal |
Polarity or Channel Type: | NPN |
Surface Mount: | YES |
Minimum DC Current Gain (hFE): | 30 |
No. of Terminals: | 3 |
Qualification: | Not Qualified |
Maximum Power Dissipation (Abs): | .25 W |
Maximum Collector-Emitter Voltage: | 50 V |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-G3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Additional Features: | BUILT-IN BIAS RESISTOR RATIO IS 1 |
Maximum Operating Temperature: | 150 Cel |