NXP Semiconductors - PDTC114YE/DG/B3,11

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PDTC114YE/DG/B3,11 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PDTC114YE/DG/B3,11
Description NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; Minimum DC Current Gain (hFE): 100;
Datasheet PDTC114YE/DG/B3,11 Datasheet
In Stock1,017
NAME DESCRIPTION
Maximum Collector Current (IC): .1 A
Maximum Power Dissipation (Abs): .15 W
Transistor Element Material: SILICON
No. of Elements: 1
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 100
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