NXP Semiconductors - PDTC114YET/R

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PDTC114YET/R by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PDTC114YET/R
Description NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Terminal Form: GULL WING; Qualification: Not Qualified;
Datasheet PDTC114YET/R Datasheet
In Stock2,641
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Configuration: SINGLE WITH BUILT-IN RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 100
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 50 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Additional Features: BUILT IN BIAS RESISTANCE RATIO IS 4.7
Maximum Operating Temperature: 150 Cel
Maximum Collector-Base Capacitance: 3.5 pF
Maximum VCEsat: .3 V
Maximum Power Dissipation Ambient: .15 W
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