NXP Semiconductors - PDTC123EMB,315

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PDTC123EMB,315 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PDTC123EMB,315
Description NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Moisture Sensitivity Level (MSL): 1; Transistor Element Material: SILICON;
Datasheet PDTC123EMB,315 Datasheet
In Stock38,548
NAME DESCRIPTION
Maximum Collector Current (IC): .1 A
Maximum Time At Peak Reflow Temperature (s): 30
Transistor Element Material: SILICON
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 30
Terminal Finish: TIN
JESD-609 Code: e3
Maximum Power Dissipation (Abs): .25 W
No. of Elements: 1
Peak Reflow Temperature (C): 260
Moisture Sensitivity Level (MSL): 1
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