NXP Semiconductors - PDTD113ES,126

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PDTD113ES,126 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PDTD113ES,126
Description NPN; Surface Mount: NO; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .5 A; No. of Elements: 1; Transistor Element Material: SILICON;
Datasheet PDTD113ES,126 Datasheet
In Stock459
NAME DESCRIPTION
Maximum Collector Current (IC): .5 A
Maximum Power Dissipation (Abs): .5 W
Transistor Element Material: SILICON
No. of Elements: 1
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: NPN
Surface Mount: NO
Minimum DC Current Gain (hFE): 33
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