NXP Semiconductors - PDTD113ZS

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PDTD113ZS by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PDTD113ZS
Description NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .5 A; Qualification: Not Qualified;
Datasheet PDTD113ZS Datasheet
In Stock467
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .5 A
Configuration: SINGLE WITH BUILT-IN RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
JEDEC-95 Code: TO-92
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: NPN
Surface Mount: NO
Minimum DC Current Gain (hFE): 70
Terminal Finish: Tin (Sn)
JESD-609 Code: e3
No. of Terminals: 3
Qualification: Not Qualified
Maximum Power Dissipation (Abs): .5 W
Maximum Collector-Emitter Voltage: 50 V
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Additional Features: BUILT IN BIAS RESISTOR RATIO 10
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