NXP Semiconductors - PDTD114ET-TAPE-13

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PDTD114ET-TAPE-13 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PDTD114ET-TAPE-13
Description NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY;
Datasheet PDTD114ET-TAPE-13 Datasheet
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NAME DESCRIPTION
Nominal Transition Frequency (fT): 100 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .5 A
Configuration: SINGLE WITH BUILT-IN RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 56
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 50 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Additional Features: BUILT-IN BIAS RESISTOR RATIO IS 1
Maximum Operating Temperature: 150 Cel
Maximum Collector-Base Capacitance: 8 pF
Maximum VCEsat: .3 V
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