NXP Semiconductors - PEMH30,115

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PEMH30,115 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PEMH30,115
Description NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A; Moisture Sensitivity Level (MSL): 1;
Datasheet PEMH30,115 Datasheet
In Stock2,473
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Transistor Element Material: SILICON
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 30
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 6
Qualification: Not Qualified
Maximum Power Dissipation (Abs): .3 W
Maximum Collector-Emitter Voltage: 50 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Maximum Operating Temperature: 150 Cel
Peak Reflow Temperature (C): 260
Moisture Sensitivity Level (MSL): 1
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Pricing (USD)

Qty. Unit Price Ext. Price
2,473 $0.037 $91.501

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