PESD12VS2UQT/R by NXP Semiconductors | Diodes

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	PESD12VS2UQT/R
Description	TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Datasheet	PESD12VS2UQT/R Datasheet
In Stock	4,678

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Breakdown Voltage:	15.3 V
Config:	COMMON ANODE, 2 ELEMENTS
Diode Type:	TRANS VOLTAGE SUPPRESSOR DIODE
Maximum Repetitive Peak Reverse Voltage:	12 V
Maximum Clamping Voltage:	35 V
Sub-Category:	Transient Suppressors
Surface Mount:	YES
Diode Element Material:	SILICON
No. of Terminals:	3
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Maximum Non Repetitive Peak Reverse Power Dissipation:	150 W
Technology:	AVALANCHE
JESD-30 Code:	R-PDSO-F3
Nominal Breakdown Voltage:	15 V
Minimum Breakdown Voltage:	14.7 V
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Polarity:	UNIDIRECTIONAL
Maximum Operating Temperature:	150 Cel
Reference Standard:	IEC-60134; IEC-61000-4-2, 4-5

Pricing (USD)

Qty.	Unit Price	Ext. Price
4,678	-	-

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