NXP Semiconductors - PESD3V3L2BT

PESD3V3L2BT by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number PESD3V3L2BT
Description TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Datasheet PESD3V3L2BT Datasheet
In Stock3,254
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Config: COMMON CATHODE, 2 ELEMENTS
Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE
Sub-Category: Transient Suppressors
Surface Mount: YES
Terminal Finish: Tin (Sn)
No. of Terminals: 3
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
Maximum Non Repetitive Peak Reverse Power Dissipation: 350 W
Technology: AVALANCHE
JESD-30 Code: R-PDSO-G3
Minimum Breakdown Voltage: 5.8 V
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Polarity: BIDIRECTIONAL
Maximum Operating Temperature: 150 Cel
Moisture Sensitivity Level (MSL): 1
Maximum Breakdown Voltage: 6.9 V
Maximum Repetitive Peak Reverse Voltage: 3.3 V
Maximum Clamping Voltage: 26 V
JEDEC-95 Code: TO-236AB
JESD-609 Code: e3
Diode Element Material: SILICON
Qualification: Not Qualified
Nominal Breakdown Voltage: 6.4 V
Additional Features: ULTRA LOW LEAKAGE CURRENT
Peak Reflow Temperature (C): 260
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
3,254 - -

Popular Products

Category Top Products