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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | PESD3V3L2UM |
| Description | TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR; |
| Datasheet | PESD3V3L2UM Datasheet |
| In Stock | 289 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Config: | COMMON ANODE, 2 ELEMENTS |
| Diode Type: | TRANS VOLTAGE SUPPRESSOR DIODE |
| Sub-Category: | Transient Suppressors |
| Surface Mount: | YES |
| Terminal Finish: | Tin (Sn) |
| No. of Terminals: | 3 |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | CHIP CARRIER |
| Maximum Non Repetitive Peak Reverse Power Dissipation: | 30 W |
| Technology: | AVALANCHE |
| JESD-30 Code: | R-PBCC-N3 |
| Minimum Breakdown Voltage: | 5.32 V |
| No. of Elements: | 2 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | NO LEAD |
| Polarity: | UNIDIRECTIONAL |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | ANODE |
| Moisture Sensitivity Level (MSL): | 1 |
| Maximum Breakdown Voltage: | 5.88 V |
| Maximum Repetitive Peak Reverse Voltage: | 3.3 V |
| JESD-609 Code: | e3 |
| Diode Element Material: | SILICON |
| Qualification: | Not Qualified |
| Nominal Breakdown Voltage: | 5.6 V |
| Maximum Power Dissipation: | .25 W |
| Peak Reflow Temperature (C): | 260 |
