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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | PESD3V3L4UWT/R |
| Description | TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 5; Surface Mount: YES; Package Shape: RECTANGULAR; |
| Datasheet | PESD3V3L4UWT/R Datasheet |
| In Stock | 387 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Config: | COMMON ANODE, 4 ELEMENTS |
| Diode Type: | TRANS VOLTAGE SUPPRESSOR DIODE |
| Sub-Category: | Transient Suppressors |
| Surface Mount: | YES |
| Maximum Reverse Current: | .3 uA |
| No. of Terminals: | 5 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| Maximum Non Repetitive Peak Reverse Power Dissipation: | 30 W |
| Technology: | AVALANCHE |
| JESD-30 Code: | R-PDSO-F5 |
| Minimum Breakdown Voltage: | 5.32 V |
| No. of Elements: | 4 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | FLAT |
| Polarity: | UNIDIRECTIONAL |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Breakdown Voltage: | 5.88 V |
| Reverse Test Voltage: | 3.3 V |
| Maximum Repetitive Peak Reverse Voltage: | 3.3 V |
| Maximum Clamping Voltage: | 12 V |
| Minimum Operating Temperature: | -65 Cel |
| Diode Element Material: | SILICON |
| Nominal Breakdown Voltage: | 5.6 V |
| Additional Features: | LOW CAPACITANCE |









