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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | PESD3V3S1UB,115 |
| Description | TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR; |
| Datasheet | PESD3V3S1UB,115 Datasheet |
| In Stock | 74,690 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Config: | SINGLE |
| Diode Type: | TRANS VOLTAGE SUPPRESSOR DIODE |
| Sub-Category: | Transient Suppressors |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| No. of Terminals: | 2 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| Maximum Non Repetitive Peak Reverse Power Dissipation: | 330 W |
| Technology: | AVALANCHE |
| JESD-30 Code: | R-PDSO-F2 |
| Minimum Breakdown Voltage: | 5.2 V |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | FLAT |
| Polarity: | UNIDIRECTIONAL |
| Maximum Operating Temperature: | 150 Cel |
| Moisture Sensitivity Level (MSL): | 1 |
| Maximum Breakdown Voltage: | 6 V |
| Maximum Repetitive Peak Reverse Voltage: | 3.3 V |
| Maximum Clamping Voltage: | 20 V |
| JESD-609 Code: | e3 |
| Diode Element Material: | SILICON |
| Qualification: | Not Qualified |
| Nominal Breakdown Voltage: | 5.6 V |
| Peak Reflow Temperature (C): | 260 |
