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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | PESD5V0F5UF,115 |
| Description | TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 6; Surface Mount: YES; Package Shape: RECTANGULAR; |
| Datasheet | PESD5V0F5UF,115 Datasheet |
| In Stock | 1,041 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Config: | COMMON ANODE, 5 ELEMENTS |
| Diode Type: | TRANS VOLTAGE SUPPRESSOR DIODE |
| Sub-Category: | Transient Suppressors |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| No. of Terminals: | 6 |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | CHIP CARRIER |
| Technology: | AVALANCHE |
| JESD-30 Code: | R-PBCC-N6 |
| Minimum Breakdown Voltage: | 7.5 V |
| No. of Elements: | 5 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | NO LEAD |
| Polarity: | UNIDIRECTIONAL |
| Maximum Operating Temperature: | 150 Cel |
| Moisture Sensitivity Level (MSL): | 1 |
| Maximum Breakdown Voltage: | 10 V |
| Maximum Repetitive Peak Reverse Voltage: | 5 V |
| Maximum Clamping Voltage: | 15 V |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -55 Cel |
| Diode Element Material: | SILICON |
| Nominal Breakdown Voltage: | 8.8 V |
| Additional Features: | LOW CAPACITANCE, IEC-61643-321 |
| Reference Standard: | AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5 |
| Peak Reflow Temperature (C): | 260 |
