PESD5V0S1BL by NXP Semiconductors | Diodes

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	PESD5V0S1BL
Description	TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Datasheet	PESD5V0S1BL Datasheet
In Stock	433

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Config:	SINGLE
Diode Type:	TRANS VOLTAGE SUPPRESSOR DIODE
Sub-Category:	Transient Suppressors
Surface Mount:	YES
Terminal Finish:	Tin (Sn)
No. of Terminals:	2
Terminal Position:	BOTTOM
Package Style (Meter):	CHIP CARRIER
Maximum Non Repetitive Peak Reverse Power Dissipation:	130 W
Technology:	AVALANCHE
JESD-30 Code:	R-PBCC-N2
Minimum Breakdown Voltage:	5.5 V
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Polarity:	BIDIRECTIONAL
Maximum Operating Temperature:	150 Cel
Moisture Sensitivity Level (MSL):	1
Maximum Breakdown Voltage:	9.5 V
Maximum Repetitive Peak Reverse Voltage:	5 V
Maximum Clamping Voltage:	14 V
JESD-609 Code:	e3
Diode Element Material:	SILICON
Qualification:	Not Qualified
Nominal Breakdown Voltage:	7.5 V
Additional Features:	LOW CAPACITANCE
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
433	-	-

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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Operating Temperature: 150 Cel; No. of Terminals: 3;