NXP Semiconductors - PHB6N60E

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PHB6N60E by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PHB6N60E
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Package Shape: RECTANGULAR; Maximum Drain Current (ID): 5.4 A;
Datasheet PHB6N60E Datasheet
In Stock622
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 341 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 5.4 A
Maximum Pulsed Drain Current (IDM): 21 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 2
Minimum DS Breakdown Voltage: 600 V
Qualification: Not Qualified
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: 1.8 ohm
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