NXP Semiconductors - PHC20512-T

PHC20512-T by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PHC20512-T
Description N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 30 V; Package Body Material: PLASTIC/EPOXY;
Datasheet PHC20512-T Datasheet
In Stock3,321
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 6.4 A
JEDEC-95 Code: MS-012AA
Polarity or Channel Type: N-CHANNEL AND P-CHANNEL
Surface Mount: YES
No. of Terminals: 8
Minimum DS Breakdown Voltage: 30 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: .05 ohm
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