NXP Semiconductors - PHC21025/T3

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PHC21025/T3 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PHC21025/T3
Description N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 30 V; Maximum Power Dissipation Ambient: 4 W; JESD-30 Code: R-PDSO-G8;
Datasheet PHC21025/T3 Datasheet
In Stock2,060
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 3.5 A
JEDEC-95 Code: MS-012AA
Polarity or Channel Type: N-CHANNEL AND P-CHANNEL
Surface Mount: YES
No. of Terminals: 8
Minimum DS Breakdown Voltage: 30 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Power Dissipation Ambient: 4 W
Maximum Drain-Source On Resistance: .1 ohm
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Pricing (USD)

Qty. Unit Price Ext. Price
2,060 $0.299 $615.940

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