PHK24NQ04LT by NXP Semiconductors | Transistors

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	PHK24NQ04LT
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 6.25 W; Package Body Material: PLASTIC/EPOXY; Maximum Drain Current (ID): 21.2 A;
Datasheet	PHK24NQ04LT Datasheet
In Stock	1,019

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	21.2 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
No. of Terminals:	8
Maximum Power Dissipation (Abs):	6.25 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G8
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.0077 ohm
Moisture Sensitivity Level (MSL):	2
JEDEC-95 Code:	MS-012
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	40 V
Qualification:	Not Qualified
Additional Features:	LOGIC LEVEL COMPATIBLE
Maximum Drain Current (Abs) (ID):	21.2 A
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,019	-	-

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