PHKD3NQ10T by NXP Semiconductors | Transistors

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	PHKD3NQ10T
Description	N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Terminal Position: DUAL; Terminal Form: GULL WING;
Datasheet	PHKD3NQ10T Datasheet
In Stock	4,983

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	3 A
Maximum Pulsed Drain Current (IDM):	12 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
Terminal Finish:	Nickel/Palladium/Gold (Ni/Pd/Au)
No. of Terminals:	8
Maximum Power Dissipation (Abs):	2 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G8
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.09 ohm
Moisture Sensitivity Level (MSL):	2
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e4
Minimum DS Breakdown Voltage:	100 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	3 A
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
4,983	-	-

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Terminal Position: DUAL; Minimum Operating Temperature: -55 Cel;

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RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

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