NXP Semiconductors - PHM25NQ10T,518

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PHM25NQ10T,518 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PHM25NQ10T,518
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; JESD-30 Code: R-PDSO-N8; Minimum DS Breakdown Voltage: 100 V;
Datasheet PHM25NQ10T,518 Datasheet
In Stock2,618
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 170 mJ
Other Names: 934057309518
PHM25NQ10T /T3
PHM25NQ10T /T3-ND
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 30.7 A
Maximum Pulsed Drain Current (IDM): 60 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 8
Minimum DS Breakdown Voltage: 100 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-N8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .03 ohm
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