Image shown is a representation only.
| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | PHN110-TAPE-13 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 8; Terminal Form: GULL WING; Transistor Element Material: SILICON; |
| Datasheet | PHN110-TAPE-13 Datasheet |
| In Stock | 4,964 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Turn On Time (ton): | 40 ns |
| Maximum Drain Current (ID): | 3.5 A |
| Maximum Pulsed Drain Current (IDM): | 14 A |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| No. of Terminals: | 8 |
| Minimum DS Breakdown Voltage: | 30 V |
| Qualification: | Not Qualified |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| Maximum Turn Off Time (toff): | 140 ns |
| JESD-30 Code: | R-PDSO-G8 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Power Dissipation Ambient: | 2 W |
| Maximum Drain-Source On Resistance: | .1 ohm |
