NXP Semiconductors - PHP225-TAPE-7

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PHP225-TAPE-7 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PHP225-TAPE-7
Description P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 8; Maximum Pulsed Drain Current (IDM): 10 A; No. of Elements: 2;
Datasheet PHP225-TAPE-7 Datasheet
In Stock638
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 80 ns
Maximum Drain Current (ID): 2.3 A
Maximum Pulsed Drain Current (IDM): 10 A
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
No. of Terminals: 8
Minimum DS Breakdown Voltage: 30 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 140 ns
JESD-30 Code: R-PDSO-G8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Power Dissipation Ambient: 4 W
Maximum Drain-Source On Resistance: .25 ohm
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